Advanced Power Electronics Corp.
AP4500GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simpl...
Advanced Power Electronics Corp.
AP4500GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER
MOSFET
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance
D2 D2
D1 D1
SO-8
G2 S2
G1 S1
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
G1
G2
S1
20V 30mΩ
6A -20V 50mΩ -5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Rating N-channel P-channel
20 -20
+12 +12 6 -5 4.8 -4 20 -20 2.0 0.016 -55 to 150 -55 to 150
Units
V V A A A W W/℃ ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201208066
AP4500GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain...