AP4515GM-HF

Advanced Power Electronics Corp. AP4515GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 N-CH G2 S2 P-CH G1 S1 Description AP4515 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 35V 22mΩ 7.7A -35V 40mΩ -5.7A D2 S2 Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 35 -35 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +12 7.7 -5.7 6.2 -4.6 30 -30 2.0 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201409021 AP4515GM-HF N-CH Electrical Characteristi...