Advanced Power Electronics Corp.
AP4525GEH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Sim...
Advanced Power Electronics Corp.
AP4525GEH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER
MOSFET
▼ Simple Drive Requirement ▼ Good Thermal Performance
D1/D2
N-CH
▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
S1 G1 S2 G2
P-CH
TO-252-4L
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G2
40V 28mΩ
15A -40V 42mΩ -12A
D2
S1 S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃
Drain-Source
Voltage Gate-Source
Voltage Drain Current Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
40 -40 ±16 ±16 15.0 -12.0 12.0 -10.0 50 -50
10.4 0.083
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 12 110
Unit ℃/W ℃/W
1 201501166
AP4525GEH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Parameter
Test Conditions
Drain-Source Breakdown
Voltage VGS...