AP4531GH

Advanced Power Electronics Corp. AP4531GH RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance Description D1/D2 S1 G1 S2 G2 TO-252-4L N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 40V 32mΩ 7.4A -40V 90mΩ -4.7A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 S1 D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 40 -40 ±20 ±20 7.4 -4.7 6.1 -3.7 40 -40 3.125 0.025 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Value 12 40 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W ℃/W Data and specifications subject to change without notice 201101071-1/7 AP4531GH N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Volt...