Advanced Power Electronics Corp.
AP4531GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simpl...
Advanced Power Electronics Corp.
AP4531GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER
MOSFET
▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ Lower Gate Charge
Description
D2 D2 D1 D1
SO-8
G2 S2 G1 S1
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
G1
G2 S1
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Rating
N-channel P-channel 40 -40
±20 ±20 5.8 -3.6
4.6 20
2
-3 -20
0.016 -55 to 150
-55 to 150
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 62.5
40V 36mΩ 5.8A -40V 90mΩ -3.6A
D2
S2
Units
V V A A A W W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
201101071-1/7
AP4531GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss...