Advanced Power Electronics Corp.
AP4563GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simp...
Advanced Power Electronics Corp.
AP4563GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER
MOSFET
▼ Simple Drive Requirement ▼ Good Thermal Performance
D1/D2
N-CH
▼ Fast Switching Performance ▼ RoHS Compliant
S1 G1 S2 G2
P-CH
Description
TO-252-4L
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
40V 30mΩ
8A -40V 36mΩ -7.3A
D2
G1 G2 S1
S2
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
P-channel
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current , VGS @ 10V Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
40 -40 +20 +20 30 -27 8.0 -7.3 6.3 -5.9 40 -40
3.13
Linear Derating Factor
0.025
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Units
V V A A A A W W/℃ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c (N-CH) Rthj-c (P-CH) Rthj-a
Maximum Thermal Resistance, Junction-case3 Maximum Thermal Resistance, Junction-case3 Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 3.2
3 40
Units ℃/W ℃/W ℃/W
1 201412194AP
AP4563GH-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. T...