AP4578GM-HF

Advanced Power Electronics Corp. AP4578GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 S1 G1 Description AP4578 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 60V 64mΩ 4.5A -60V 125mΩ -3A D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 -60 ±20 ±20 4.5 -3 3.6 -2.4 20 -20 2.0 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 201501092 AP4578GM-HF N-CH Electrical Characteristics@Tj=25...