AP4800N2

Advanced Power Electronics Corp. AP4800N2 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G Description AP4800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D BVDSS RDS(ON) ID 30V 18mΩ 9A S D D G Top view D D S D D D S S DFN 2x2 D D G Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3 @ VGS=10V Drain Current3 @ VGS=10V Pulsed Drain Current1 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 30 +20 9 7.2 40 2.4 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 52 Unit ℃/W 1 201503171 AP4800N2 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage F...