AP4P018M

Advanced Power Electronics Corp. AP4P018M Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free S Description AP4P018 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3 D D D D -40V 18mΩ -9.4A G S SS Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation3 Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range -40 +20 -9.4 -7.5 -40 2.5 18 -55 to 150 -55 to 150 V V A A A W mJ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 50 Unit ℃/W 1 201705021 AP4P018M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss ...