AP85L02H/J
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low Gate Charge ▼ Simple Drive ...
AP85L02H/J
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching
Description
G
D S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low
voltage applications such as DC/DC converters. The through-hole version (AP85L02J) is available for low-profile applications.
BVDSS RDS(ON) ID
25V 6mΩ 85A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G D S
TO-251(J)
Rating 25
± 20 85 53 310 96 0.77
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