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AP9575GH Datasheet

Part Number AP9575GH
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9575GH DatasheetAP9575GH Datasheet (PDF)

AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S www.DataSheet4U.com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -60V 90mΩ -15A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575GJ) is available for low-profile applications. G .

  AP9575GH   AP9575GH






Part Number AP9575GS-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9575GH DatasheetAP9575GS-HF Datasheet (PDF)

AP9575GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 70mΩ -16A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-i.

  AP9575GH   AP9575GH







Part Number AP9575GP-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9575GH DatasheetAP9575GP-HF Datasheet (PDF)

AP9575GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 70mΩ -16A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-i.

  AP9575GH   AP9575GH







Part Number AP9575GM-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9575GH DatasheetAP9575GM-HF Datasheet (PDF)

AP9575GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -60V 90mΩ -4A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commer.

  AP9575GH   AP9575GH







Part Number AP9575GM
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9575GH DatasheetAP9575GM Datasheet (PDF)

AP9575GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -60V 90mΩ -4A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount app.

  AP9575GH   AP9575GH







Part Number AP9575GJ-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-Channel MOSFET
Datasheet AP9575GH DatasheetAP9575GJ-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP9575GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -60V 90mΩ -15A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9575GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount app.

  AP9575GH   AP9575GH







P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S www.DataSheet4U.com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -60V 90mΩ -15A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 +25 -15 -9.5 -45 31.3 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.0 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200902093 AP9575GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VGS=-4.5V, ID=-9A VGS(th) gfs IDSS IGS.


2010-05-24 : SG-3030LC    SG-3030JC    SG-3030JF    SG-3040LC    SG-3040JC    SG3030J    SJ-820    AP9575GH    AP9575GJ    SSM9510GM   


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