APL502B2(G) APL502L(G)
500V, 58A, 0.090Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
LINEAR MOSFET
Linear Mosfe...
APL502B2(G) APL502L(G)
500V, 58A, 0.090Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
LINEAR
MOSFET
Linear
Mosfets are optimized for applications operating in the Linear region where concurrent high
voltage and high current can occur at near DC conditions (>100 msec).
T-MaxTM
TO-264
Higher FBSOA
Popular T-MAX™ or TO-264 Package
Higher Power Dissipation
D
G S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APL502B2_L (G)
UNIT
VDSS ID IDM VGS
VGSM
PD
Drain-Source
Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source
Voltage Continuous
Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
500 58 232 ±30 ±40 730 5.84
Volts Amps
Volts Watts W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 58 50 3000
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BVDSS ID(ON) RDS(ON)
IDSS
IGSS VGS(TH)
Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250 μA) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 (VGS = 12V, 29A) Zero Gate
Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate
Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Sour...