APM4500 Datasheet PDF

www.DataSheet4U.com APM4500 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V SO-8 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package G1 G2 D1 D1 S2 Applications S1 D2.

APM4500K Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V Pin Description D1 D1 D2 D2 • P-Channel -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V RDS(ON) =105mΩ(typ.) @ VGS =-2.5V S1 G1 S2 G2 Top View of SOP − 8 (8) D1 (7) D1 (3) S2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 (4) G2 Applications.

APM4500AK Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 20V/8A, RDS(ON) =22m Ω(typ.) @ VGS = 4.5V RDS(ON) =30m Ω(typ.) @ VGS = 2.5V Pin Description D1 D1 D2 D2 S1 G1 S2 G2 • P-Channel -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V RDS(ON) =105mΩ(typ.) @ VGS =-2.5V Top View of SOP − 8 (8) D1 (7) D1 • • • (6) D2 (5) D2 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Complian.