APM4500

www.DataSheet4U.com APM4500 Dual Enhancement Mode MOSFET (N-and P-Channel) Features N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V SO-8 Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package G1 G2 D1 D1 S2 Applications S1 D2 D2 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4500 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM4500 K : APM4500 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw APM4500 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RθjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C (TA = 25°C unless otherwise noted) N-Channel 20 ±12 8 35 2.5 1.0 150 -5...