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APM4500
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel 20V/8A , RDS(ON)=22mΩ(...
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APM4500
Dual Enhancement Mode
MOSFET (N-and P-Channel)
Features
N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V
Pin Description
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V
SO-8
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G1 G2 D1 D1 S2
Applications
S1 D2 D2
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
N-Channel
MOSFET
P-Channel
MOSFET
Ordering and Marking Information
APM4500
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel
APM4500 K :
APM4500 XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw
APM4500
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM PD TJ TSTG RθjA Parameter Drain-Source
Voltage Gate-Source
Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C
(TA = 25°C unless otherwise noted)
N-Channel 20 ±12 8 35 2.5 1.0 150 -5...