APT11GF120BRDQ1

TYPICAL PERFORMANCE CURVES ® APT11GF120BRDQ1 www.DataSheet4U.com APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. APT11GF120BRDQ1(G) 1200V FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. Low Forward Voltage Drop RBSOA and SCSOA Rated High Freq. Switching to 20KHz Ultra Low Leakage Current G TO -2 47 C E Ultrafast Soft Recovery Anti-parallel Diode C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT11GF120BRDQ1(G) UNIT Volts 1200 ±30 25 14 24 24A @ 1200V 156 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 5.5 2.5 3.1 2 2 6.5 3.0 500 3000 ±100 Collector-Emitter On Voltage (VGE = 15V, I C = 8...