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MOSFET. APT12057LLLG Datasheet |
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APT12057B2LL(G)
APT12057LLL(G)
1200V 22A 0.570Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 R MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Increased Power Dissipation
D
• Easier To Drive
G
• Popular T-MAX™ or TO-264 Package
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT12057(G)
1200
22
88
±30
±40
690
5.52
-55 to 150
300
22
50
3000
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN
1200
22
3
TYP MAX
0.570
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
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DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6Ω
APT12057 B2LL - LLL(G)
MIN TYP MAX UNIT
5155 6200
770 1080 pF
130 200
187 290
24 29 nC
120 180
11 22
20 40
ns
36 54
21 30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
dv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
MIN TYP MAX UNIT
22
Amps
88
1.3 Volts
1291
ns
29 µC
10 V/ns
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 12.40mH, RG = 25Ω, Peak IL = 22A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
0.1
0.05
0.01
0.005
0.001
10-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
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Typical Performance Curves
Graph Deleted
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
80
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
70 @ <0.5 % DUTY CYCLE
60
50
40
30
20 TJ = +125°C
10 TJ = +25°C
TJ = -55°C
0
0 2 4 6 8 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE4, TRANSFERCHARACTERISTICS
25
20
15
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT12057 B2LL - LLL(G)
50
45 VGS =15,10 & 8V
40 7V
35
6.5V
30
25
6V
20
15
5.5V
10
5 5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
1.20
1.10
VGS=10V
1.00
0.90
VGS=20V
0.80
0 5 10 15 20 25 30 35 40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
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