600V 20.7A 0.190Ω
APT20N60BC3 APT20N60SC3
Super Junction MOSFET
C O OLMOS
Power Semiconductors
TO-247
D3PAK
• Ultra...
600V 20.7A 0.190Ω
APT20N60BC3 APT20N60SC3
Super Junction
MOSFET
C O OLMOS
Power Semiconductors
TO-247
D3PAK
Ultra low RDS(ON) Low Miller Capacitance www.DataSheet4U.com Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT20N60BC3_SC3 UNIT Volts Amps
Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
600 20.7 62 ±20 ±30 208 1.67 -55 to 150 260 50 20 1
4
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source
Voltage slope (VDS = 480V, ID = 20.7A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/°C °C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
690
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.16 0.05 0.19 25 250 ±100 2.1 3 3.9
(VGS = 10V, ID = 13.1A)
Ohms µA nA Volts
Zero Gate
Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate
Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Volt...