Ultra fast Rectifier
INCHANGE Semiconductor
APT30DQ120BCT
FEATURES ·With TO-247 packaging ·High junction temperature c...
Ultra fast Rectifier
INCHANGE Semiconductor
APT30DQ120BCT
FEATURES ·With TO-247 packaging ·High junction temperature capability ·Low forward
voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse
Voltage RMS
Voltage DC Blocking
Voltage
Average Rectified Forward Current @Tc=110℃
VALUE
UNI T
1200
V
30
A
IFSM
RMS Forward Current
55
A
Nonrepetitive Peak Surge Current
IFSM
(10ms single half sine-wave superimposed on
210
A
rated load conditions)
TJ
Junction Temperature
-55~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
Ultra fast Rectifier
INCHANGE Semiconductor
APT30DQ120BCT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 1.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
IF= 30A; Tj= 25℃
VF
Maximum Instantaneous Forward
Voltage IF= 30A; Tj= 125℃
IF= 60A; Tj= 25℃
IR
Maximum Instantaneous Reverse Current
VR= rated VRRM; Tj= 25℃ VR= rated VRRM; Tj= 100℃
MAX
3.3 3.4 2.1
100 500
UNIT V μA
trr
Maximum Reverse Recovery Time
IF =15A;diF/dt=-200A/μs,VR=30V
50
ns
NOT...
