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APT50GP60B Datasheet

Part Number APT50GP60B
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60B DatasheetAPT50GP60B Datasheet (PDF)

www.DataSheet4U.com APT50GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 26A • 100 kHz operation @ 400V, 41A • SSOA rated G E C MAXIMUM RATINGS.

  APT50GP60B   APT50GP60B






Part Number APT50GP60S
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60B DatasheetAPT50GP60S Datasheet (PDF)

www.DataSheet4U.com APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. D3PAK G C C E G E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 26A • 100 kHz operation @ 400V, 41A • SSOA ra.

  APT50GP60B   APT50GP60B







Part Number APT50GP60JDQ2
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60B DatasheetAPT50GP60JDQ2 Datasheet (PDF)

www.DataSheet4U.com TYPICAL PERFORMANCE CURVES ® APT50GP60JDQ2 600V APT50GP60JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • SSOA Rated S OT 22 7 ISOTOP ® "UL Recognized" file #.

  APT50GP60B   APT50GP60B







Part Number APT50GP60J
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60B DatasheetAPT50GP60J Datasheet (PDF)

www.DataSheet4U.com APT50GP60J 600V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ISOTOP ® ® E C E SO 2 T- 27 "UL Recognized" • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 19A • 100 kHz operation @ 400V, 26A • .

  APT50GP60B   APT50GP60B







Part Number APT50GP60B2DQ2G
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60B DatasheetAPT50GP60B2DQ2G Datasheet (PDF)

www.DataSheet4U.com TYPICAL PERFORMANCE CURVES ® APT50GP60B2DQ2 APT50GP60B2DQ2G* APT50GP60B2DQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tai.

  APT50GP60B   APT50GP60B







Part Number APT50GP60B2DQ2
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description POWER MOS 7 IGBT
Datasheet APT50GP60B DatasheetAPT50GP60B2DQ2 Datasheet (PDF)

www.DataSheet4U.com TYPICAL PERFORMANCE CURVES ® APT50GP60B2DQ2 APT50GP60B2DQ2G* APT50GP60B2DQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tai.

  APT50GP60B   APT50GP60B







POWER MOS 7 IGBT

www.DataSheet4U.com APT50GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 26A • 100 kHz operation @ 400V, 41A • SSOA rated G E C MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT50GP60B UNIT 600 ±20 ±30 @ TC = 25°C Volts 100 72 190 190A@600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 500 2 6 2.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Curre.


2006-12-19 : 16CYQ150C    1N4938-1    54VCXH162244    54VCXHR162245    AD7764    AN1101SSM    APT50GP60B    APT50GP60B2DF2    APT50GP60B2DQ2    APT50GP60B2DQ2G   


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