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TYPICAL PERFORMANCE CURVES ®
APT50GP60JDQ2 600V
APT50GP60JDQ2
POWER MOS 7 IGBT
®
E G C
E
The ...
www.DataSheet4U.com
TYPICAL PERFORMANCE CURVES ®
APT50GP60JDQ2 600V
APT50GP60JDQ2
POWER MOS 7 IGBT
®
E G C
E
The POWER MOS 7® IGBT is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high
voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff SSOA Rated
S
OT
22
7
ISOTOP ®
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter
Voltage Gate-Emitter
Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT50GP60JDQ2 UNIT Volts
600 ±30 100 46 190 190A @ 600V 329 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown
Voltage (VGE = 0V, I C = 525µA) Gate Threshold
Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units
600 3 4.5 2.2 2.1 525
2
6 2.7
Collector-Emitter On
Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On
Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 60...