APT60GF120JRDQ3

TYPICAL PERFORMANCE CURVES ® APT60GF120JRDQ3 1200V APT60GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. Low Forward Voltage Drop RBSOA and SCSOA Rated High Freq. Switching to 20KHz Ultra Low Leakage Current E G C E S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 Ultrafast Soft Recovery Anti-parallel Diode C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT60GF120JRDQ3 UNIT Volts 1200 ±30 149 79 300 300A @ 1200V 625 -55 to 150 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range www.DataSheet4U.com Watts STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 500µA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 5.5 2.5 3.1 0.35 2 6.5 3.0 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Curren...