isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 90mΩ(Max) ·Fast Switching ·100%...
isc N-Channel
MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 90mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
600
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
66
A
IDM
Drain Current-Single Pluse
80
A
PD
Total Dissipation @TC=25℃
1135
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.11 ℃/W
APT66M60B2
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 33A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-
Voltage
IS= 33A; VGS= 0
APT66M60B2
MIN MAX UNIT
600
V
3
5
V
90
mΩ
±100 nA
100
μA
1
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T...
