AS4C14400

High Performance 1M×4 CMOS DRAM AS4C14400 AS4C14405 ® 1M-bit × 4 CMOS DRAM (Fast page mode or EDO) Preliminary information Features Organization: 1,048,576 words × 4 bits High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .D w w w - 300 mil, 20/26-pin SOJ - 300 mil, 20/26-pin TSOP Read-modify-write TTL-compatible, three-state I/O JEDEC standard packages Single 5V power supply ESD protection ≥ 2001V Latch-up current ≥ 200 mA Pin designation Pin(s) RAS OE A0 to A9 TSOP Description 26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row address strobe Output enable I/O0 to I/O3 CAS WE VCC 18 17 16 15 14 A8 A7 A6 A5 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 Column address strobe Read/write control Power (5.0 ± 0.5V) GND Ground Symbol tRAC tCAA tCAC 4C14400-40 40 20 10 10 70 30 90 4C14400-50 50 25 13 13 90 35 80 4C14400-60 60 30 15 15 40 70 4C144...