AS4C1M16F5

August 2001 ® AS4C1M16F5 5V 1M×16 CMOS DRAM (fast-page mode) Features Organization: 1,048,576 words × 16 bits High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ Fast page mode 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write TTL-compatible, three-state DQ JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 5V power supply Industrial and commercial temperature available Pin arrangement SOJ Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .D w w w Pin designation Pin(s) RAS TSOP 2 Description 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 VCC DQ1 DQ2 DQ3 DQ4 VCC DQ5 DQ6 DQ7 DQ8 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC A0 to A9 Address inputs Input/output Row address strobe Output enable Write enable DQ1 to DQ16 OE WE UCAS LCAS Column address strobe, upper byte Column address strobe, lower byte Power Ground NC NC A4 VSS WE RAS NC NC A0 A1 A2 A...