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AT28C010 EEPROM Datasheet PDF1-Megabit (128K x 8) Paged Parallel Military EEPROM 1-Megabit (128K x 8) Paged Parallel Military EEPROM |
　
　
　
| Part Number | AT28C010 |
|---|---|
| Description | 1-Megabit (128K x 8) Paged Parallel Military EEPROM |
| Feature | Features
• Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches f or 128-Bytes – Internal Control Timer • Fast Write Cycle Time – Page Wri te Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation • Low P ower Dissipation – 80 mA Active Curre nt – 300ï€ ÂµA CMOS Standby Current â €¢ Hardware and Software Data Protectio n • DATA Polling for End of Write Det ection • High Reliability CMOS Techno logy – Endurance: 104 or 105 Cycles â €“ Data Retention: 10 Years • Single 5V  10% Supply • CMOS and TTL Comp atible Inputs and Outputs • JEDEC App roved Byte-Wide . |
| Manufacture | ATMEL Corporation |
| Datasheet |
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| Part Number | AT28C010 |
|---|---|
| Description | 1-megabit (128K x 8) Paged Parallel EEPROM |
| Feature | Features
• Fast Read Access Time – 1 20 ns • Automatic Page Write Operatio n – Internal Address and Data Latches for 128 Bytes – Internal Control Tim er • Fast Write Cycle Time – Page W rite Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • L ow Power Dissipation – 40 mA Active C urrent – 200 µA CMOS Standby Current • Hardware and Software Data Protect ion • DATA Polling for End of Write D etection • High Reliability CMOS Tech nology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Singl e 5V ± 10% Supply • CMOS and TTL Com patible Inputs and Outputs • JEDEC Ap proved Byte-wide . |
| Manufacture | ATMEL |
| Datasheet |
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| Part Number | AT28C010 |
|---|---|
| Description | 1-Megabit (128K x 8) Paged Parallel EEPROM |
| Feature | 1-Megabit (128K x 8) Paged Parallel EEPR OM
Features
• Fast Read Access Time: 120 ns • Automatic Page Write Operati on: – Internal address and data latch es for 128 bytes – Internal control t imer • Fast Write Cycle Time: – Pag e Write cycle time: 10 ms maximum – 1 to 128-byte Page Write operation • L ow-Power Dissipation: – 40 mA active current – 200 µA CMOS standby curren t • Hardware and Software Data Protec tion • DATA Polling for End of Write Detection • High Reliability CMOS Tec hnology: – Endurance: 10,000 or 100,0 00 cycles – Data retention: 10 years • Single 5V ± 10% Supply • CMOS an d TTL Compa . |
| Manufacture | Microchip |
| Datasheet |
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