1-Megabit (128K x 8) Paged Parallel Military EEPROM
Description
Features
Fast Read Access Time - 120 ns Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation Low Power Dissipation – 80 mA Active Current – 300µA CMOS Standby Current Hardware and Software Data Pro...
