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AT28C010 EEPROM Datasheet PDF

1-Megabit (128K x 8) Paged Parallel Military EEPROM

1-Megabit (128K x 8) Paged Parallel Military EEPROM

 

 

 

Part Number AT28C010
Description 1-Megabit (128K x 8) Paged Parallel Military EEPROM
Feature Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation – Internal Address and Data Latches f or 128-Bytes – Internal Control Timer
• Fast Write Cycle Time – Page Wri te Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation
• Low P ower Dissipation – 80 mA Active Curre nt – 300µA CMOS Standby Current Hardware and Software Data Protectio n
• DATA Polling for End of Write Det ection
• High Reliability CMOS Techno logy – Endurance: 104 or 105 Cycles Data Retention: 10 Years
• Single 5V  10% Supply
• CMOS and TTL Comp atible Inputs and Outputs
• JEDEC App roved Byte-Wide .
Manufacture ATMEL Corporation
Datasheet
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AT28C010

 

 

 


 

 

 

Part Number AT28C010
Description 1-megabit (128K x 8) Paged Parallel EEPROM
Feature Features
• Fast Read Access Time – 1 20 ns
• Automatic Page Write Operatio n – Internal Address and Data Latches for 128 Bytes – Internal Control Tim er
• Fast Write Cycle Time – Page W rite Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation
• L ow Power Dissipation – 40 mA Active C urrent – 200 µA CMOS Standby Current
• Hardware and Software Data Protect ion
• DATA Polling for End of Write D etection
• High Reliability CMOS Tech nology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years
• Singl e 5V ± 10% Supply
• CMOS and TTL Com patible Inputs and Outputs
• JEDEC Ap proved Byte-wide .
Manufacture ATMEL
Datasheet
Download AT28C010 Datasheet

AT28C010

 

 

 


 

 

 

Part Number AT28C010
Description 1-Megabit (128K x 8) Paged Parallel EEPROM
Feature 1-Megabit (128K x 8) Paged Parallel EEPR OM Features
• Fast Read Access Time: 120 ns
• Automatic Page Write Operati on: – Internal address and data latch es for 128 bytes – Internal control t imer
• Fast Write Cycle Time: – Pag e Write cycle time: 10 ms maximum – 1 to 128-byte Page Write operation
• L ow-Power Dissipation: – 40 mA active current – 200 µA CMOS standby curren t
• Hardware and Software Data Protec tion
• DATA Polling for End of Write Detection
• High Reliability CMOS Tec hnology: – Endurance: 10,000 or 100,0 00 cycles – Data retention: 10 years
• Single 5V ± 10% Supply
• CMOS an d TTL Compa .
Manufacture Microchip
Datasheet
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AT28C010

 

 

 

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