AT41470

( DataSheet : www.DataSheet4U.com ) AT41470 NPN SILICON BIPOLAR TRANSISTOR DESCRIPTION: The ASI AT41470 is a Common Emitter Device Designed for low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. PACKAGE STYLE MAXIMUM RATINGS IC VCEO VCBO VEBO PDISS TJ TSTG 60 mA 12 V 20 V 1.5 V 500 mW @ TC = 25°C -65 °C to +200 °C -65 °C to +150 °C 1 = BASE 2 & 4 = EMITTER 3 = COLLECTOR CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21E  P1dB G1dB 2 TC = 25 C O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 25 mA IC = 25 mA IC = 25 mA IC = 25 mA IC = 10 mA IC = 10 mA f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz MINIMUM TYPICAL MAXIMUM 200 1.0 30 150 0.2 8.0 12.0 6.5 19.0 18.5 15.0 10.5 1.3 1.6 3.0 1.9 300 UNITS Na µA --pF GHz dB dBm dB NFO dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 www.DataSheet4U.com www.DataSheet4U.com ...