Features
• Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and ...
Features
Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 55 ns Internal Program Control and Timer Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (32K Bytes, 64K Bytes) Fast Erase Cycle Time – 3 Seconds Byte-by-Byte Programming – 30 µs/Byte Typical Hardware Data Protection DATA Polling for End of Program Detection Low Power Dissipation – 15 mA Active Current – 50 µA
CMOS Standby Current Typical 10,000 Write Cycles
Description
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the device offers access times to 55 ns with power dissipation of just 54 mW over the industrial temperature range.
Pin Configurations
Pin Name A0 - A16 CE OE WE RESET I/O0 - I/O7 NC
Function Addr...
