Features
• Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Int...
Features
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 µs/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation
– 25 mA Active Current
– 50 µA
CMOS Standby Current Typical 10,000 Write Cycles Small Packaging
– 8 x 14 mm CBGA
Description
The AT49BV/LV080(T) are 3-volt-only in-system Flash Memory devices. Their 8
megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to
120 ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the
CMOS standby current is less than 50 µA.
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Pin Configurations
Pin Name Function
TSOP Top View T...