AT49BV4096A

Features 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Byte-by-Byte or Word-By-Word Programming - 30 µs Typical Hardware Data Protection DATA Polling For End Of Program Detection Low-Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA. The device contains...