AT49LV040

Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programming - 30 µs/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Small Packaging – 8 x 8 mm CBGA – 8 x 14 mm V-TSOP Description The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA. The device contains a user-enabled “boot block” protection feature. Two versions...