AT49LV1024A

www.DataSheet4U.com Features Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access Time – 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time – 1.5 Seconds Word-by-word Programming – 20 µs/Word Typical Hardware Data Protection Data Polling for End of Program Detection Small 10 x 14 mm VSOP Package Typical 10,000 Write Cycles Description The AT49BV/LV1024A is a 3-volt only in-system Flash memory. The 1-megabit of memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns with power dissipation of just 72 mW over the industrial temperature range. To allow for simple in-system reprogrammability, the AT49BV/LV1024A does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV/LV1024A is performed by erasing a block of data (entire chip or main memory block) and then programming on a word by word basis. The typical word programming time is a fast 20 µs. The end of a program cycle can be optionally detected by the Data Polling feature. Once the end of a word program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. Th...