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AT52BC3221A Datasheet

Part Number AT52BC3221A
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 32-Mbit Flash 8-Mbit PSRAM Stack Memory
Datasheet AT52BC3221A DatasheetAT52BC3221A Datasheet (PDF)

Features • 32-Mbit Flash and 4-Mbit/8-Mbit PSRAM • Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package • 2.7V to 3.3V Operating Voltage www.DataSheet4U.com Flash • • • • • • 32-megabit (2M x 16) 2.7V to 3.3V Read/Write Access Time – 70 ns Sector Erase Architecture – Sixty-three 32K Word Sectors with Individual Write Lockout – Eight 4K Word Sectors with Individual Write Lockout Fast Word Program Time – 15 µs Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from An.

  AT52BC3221A   AT52BC3221A






Part Number AT52BC3221AT
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 32-Mbit Flash 8-Mbit PSRAM Stack Memory
Datasheet AT52BC3221A DatasheetAT52BC3221AT Datasheet (PDF)

Features • 32-Mbit Flash and 4-Mbit/8-Mbit PSRAM • Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package • 2.7V to 3.3V Operating Voltage www.DataSheet4U.com Flash • • • • • • 32-megabit (2M x 16) 2.7V to 3.3V Read/Write Access Time – 70 ns Sector Erase Architecture – Sixty-three 32K Word Sectors with Individual Write Lockout – Eight 4K Word Sectors with Individual Write Lockout Fast Word Program Time – 15 µs Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from An.

  AT52BC3221A   AT52BC3221A







32-Mbit Flash 8-Mbit PSRAM Stack Memory

Features • 32-Mbit Flash and 4-Mbit/8-Mbit PSRAM • Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package • 2.7V to 3.3V Operating Voltage www.DataSheet4U.com Flash • • • • • • 32-megabit (2M x 16) 2.7V to 3.3V Read/Write Access Time – 70 ns Sector Erase Architecture – Sixty-three 32K Word Sectors with Individual Write Lockout – Eight 4K Word Sectors with Individual Write Lockout Fast Word Program Time – 15 µs Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 12 mA Active – 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles 32-Mbit Flash + 8-Mbit PSRAM Stack Memory AT52BC3221A AT52BC3221AT • • • • • • • • PSRAM • • • • • 8-megabit (512K x 16) 2.7V to 3.3V VCC 70 ns Access Time Extended Temperature Range ISB0 < 10 µA when Deep Power-Down Preliminary Device Number AT52BC3221A AT52BC3221AT Flash Boot Location Bottom Top Flash Plane Configuration 32M (2M x 16) 32M (2M x 16) PSRAM Configuration 8M (512K x 16) 8M (512K x 16) Rev. 3466A–STKD–11/04 1 Pin Configuration Pin Name A0 - A18, A19 - A20 CE OE WE RESET RDY/BUSY VPP VCC GND I.


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