AT68166FT

Features 16 www.DataSheet4U.com Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns (preliminary information) Very Low Power Consumption – Active: 595 mW per byte (Max) @ 20 ns(1), 415mW per byte (Max) @ 50ns(2) – Standby: 15 mW (Typ) Military Temperature Range: -55 to +125°C TTL-Compatible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 ESD Better than 2000V Quality Grades: – QML-Q or V with SMD 5962-06229 – ESCC 950 Mils Wide MQFP 68 Package Mass : 8.5 grams 1. For AT68166FT-20 only. 540mW for AT68166FT-25. 2. For AT68166FT-20 only. 450mW for AT68166FT-25. Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM MultiChip Module AT68166FT Notes: Description The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM packaging technology allows a reduction of the PCB area by 50% with a weight savings of...