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B1007 Datasheet

Part Number B1007
Manufacturers SavantIC
Logo SavantIC
Description 2SB1007
Datasheet B1007 DatasheetB1007 Datasheet (PDF)

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB1007 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) PD Tota.

  B1007   B1007






Part Number B100xxL
Manufacturers ETC
Logo ETC
Description Led Display Master Green
Datasheet B1007 DatasheetB100xxL Datasheet (PDF)

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  B1007   B1007







Part Number B100NF04L
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STB100NF04L
Datasheet B1007 DatasheetB100NF04L Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.0042Ω ID 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics.

  B1007   B1007







Part Number B1008
Manufacturers Rohm
Logo Rohm
Description Epitaxial Planar PNP Silicon Transistor
Datasheet B1007 DatasheetB1008 Datasheet (PDF)

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  B1007   B1007







Part Number B10011S
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description CAN TRANSCEIVER
Datasheet B1007 DatasheetB10011S Datasheet (PDF)

Features • Capability of Single-wire Operation • Hardware Fault Recognition • Inputs with High Common-mode and Differential-mode Interference Rejection Above 100 VPP due to External Filters at the Receiver Input • Immunity Against Electromagnetic Interference • Immunity Against Ground-voltage Offsets < 6 V • Ruggedized Against ESD by MIL-STD-883C, Method 3015 Benefits Systems which employ this device have the following benefits compared to solutions using discrete components: • High Reliabilit.

  B1007   B1007







2SB1007

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB1007 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE -80 -80 -5 -0.7 1.2 10 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=-50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=-50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA ICBO Collector cut-off current IEBO Emitter cut-off current VCB=-50V; IE=0 VEB=-4V; IC=0 hFE DC current gain IC=-0.1A ; VCE=-3V COB Output capacitance IE=0; VCB=-10V;f=1MHz fT Transition frequency IE=50mA ; VCE=-10V Product Specification 2SB1007 MIN TYP. MAX UNIT -80 V -80 V -5 V -0.2 -0.4 V -0.5 µA -0.5 µA 82 390 14 20 pF 100 MHz hFE Classifications PQ 82-180 120-270 R 180-390 2 Savant.


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