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Toshiba
Toshiba
B1016A 2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc
B1016A pdf




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B1016A datasheet B1016A component B1016A integrated circuit B1016A schematic B1016A application note 1016A 016A 16A B1016 B101 B10

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