TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown...
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
High breakdown
voltage: VCEO = −100 V Low collector-emitter saturation
voltage: VCE (sat) = −2.0 V (max) Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
−100
V
Collector-emitter
voltage
VCEO
−100
V
Emitter-base
voltage
VEBO −5 V
Collector current
IC −5 A
Base current
IB
−0.5
A
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current gain
Collector-emitter satur...