JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
B1020X SCHOTTKY BARRIER DIODE
SO...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
B1020X SCHOTTKY BARRIER DIODE
SOD-523
FEATURES Low Forward
Voltage Drop Surface Mount Package Ideally Suited For Automatic Insertion
MARKING: L6
L6
L6
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VRRM VRWM
VR VR(RMS)
IFM
Repetitive Peak Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage RMS Reverse
Voltage Forward Continuous Current
IFSM PD RθJA Tj
Non-repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction temperature
Tstg Storage Temperature
Limit
20
14 1.0
4 150 667 125 -55 ~ +150
Unit
V
V A A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Reverse breakdown
voltage
V(BR)
IR=250μA
Reverse current
VR=10V IR
VR=20V
Forward
voltage Capacitance between terminals
IF=10mA VF IF=100mA
IF=1A
CT VR= 0V,f=1MHz
Min Typ Max 20
80 100 0.23 0.305 0.50 120
Unit V μA μA V V V pF
www.cj-elec.com
1
A-1,May,2016
Typical Characteristics
1000
Pulsed
Forward Characteristics
100
T a =100 oC
FORWARD CURRENT I (mA) F
10
oC
=25
T a
1
0.1 0.0
0.1 0.2 0.3 0.4 0.5
FORWARD
VOLTAGE V (V) F
0.6
REVERSE CURRENT I (uA) R
10000
Pulsed
1000
Reverse Characteristics
T =100 oC a
100
10 T =25 oC a
1 0 4 8 12 16...