SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220C package ·DARLINGTON ...
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1605
APPLICATIONS ·Designed for use in low frequency
power amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Product Specification
2SB1105
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO
IC PC Tj Tstg
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature
Open emitter Open base Open collector
TC=25
VALUE -120 -120 -7 -3 30 150
-55~150
UNIT V V V A W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown
voltage IC=-25mA, RBE=<
V(BR)EBO Emitter-base breakdown
voltage
IE=-50mA, IC=0
VCEsat-1 Collector-emitter saturation
voltage IC=-1.5A ,IB=-3mA
VCEsat-2 Collector-emitter saturation
voltage IC=-3A ,IB=-30mA
VBEsat-1 Base-emitter saturation
voltage
IC=-1.5A ,IB=-3mA
VBEsat-2 Base-emitter saturation
voltage
IC=-3A ,IB=-30mA
ICBO Collector cut-off current
VCB=-120V, IE=0
ICEO Collector cut-off current
VCE=-100V, RBE=<
hFE DC current gain
IC=-1.5A ; VCE=-3V
VD Diode forward
voltage
ID=-3A
Product Specification
2SB1105
MIN TYP. MAX UNIT
-120
V
-7 V
-1.5 V
-3.0 V
-2.0...