Ordering number:2094B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1135/2SD1668
50V/7A Switching Applications
Appli...
Ordering number:2094B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1135/2SD1668
50V/7A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
· Low-saturation collector-to-emitter
voltage : VCE(sat)=–0.4V max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2041A
[2SB1135/2SD1668]
( ) : 2SB1135
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current DC Current Gain
IEBO hFE1 hFE2
VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A
Gain-Bandwidth Product Collector-to-Emitter Saturation
Voltage
fT VCE=(–)5V, IC=(–)1A VCE(sat) IC=(–)4A, IB=(–)0.4A
* : The 2SB1135/2SD1668 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-220ML
Ratings (–)60 (–)50 (–)6 (–)7 (–)12 2 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.1 (–)0.1 280*
(–)0.4
Unit mA mA
MHz V
Any and all SANYO products described or contained her...