B1149

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Product Specification 2SB1149 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter Open base VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak PD Total power dissipation Open collector Ta=25 TC=25 Tj Junction temperature Tstg Storage temperature VALUE -100 -100 -8 -3.0 -5.0 1.3 15 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Product Specification 2SB1149 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-1.5mA ICBO Collector cut-off current VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1.5A ; VCE=-2V hFE-2 DC current gain IC=-3A ; VCE=-2V Switching times -0.9 -1.2 V -1.5 -2.0 V -10 µA -2.0 mA 2000 15000 1000 ton Turn-on time tstg Storage time tf Fall time IC=-1.5A ; IB1=-IB2=-1.5mA VCC?-40V;RL=27B 0.5 µs 2.0 µs 1.0 µs ...