STB11NM60T4, STP11NM60
Datasheet
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 package...
STB11NM60T4, STP11NM60
Datasheet
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power
MOSFETs in D²PAK and TO-220 packages
TAB TAB
3 1 D2PAK
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Features
Order codes
VDSS (@ TJmax)
RDS(on) max.
STB11NM60T4 STP11NM60
650 V
0.45 Ω
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
ID 11 A
Package
D²PAK TO-220
Applications
Switching applications
Description
These devices are N-channel Power
MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power
MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Product status link STB11NM60T4 STP11NM60
Product summary
Order code
STB11NM60T4
Marking
B11NM60
Package
D²PAK
Packing
Tape and reel
Order code
STP11NM60
Markin...
