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B1274 Datasheet

Part Number B1274
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet B1274 DatasheetB1274 Datasheet (PDF)

  B1274   B1274
Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier. Features • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C www.DataSheet.co.kr 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 Conditions Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150 Unit V V V A A W W °C °C Elect.






Part Number B1274
Manufacturers SeCoS
Logo SeCoS
Description PNP Plastic Encapsulated Transistor
Datasheet B1274 DatasheetB1274 Datasheet (PDF)

  B1274   B1274
Elektronische Bauelemente 2SB1274 -3A , -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Switching and Amplification.  Wide ASO (Adoption of MBIT Process)  Low Saturation Voltage. TO-220J Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage VCBO -60 Collector to Emitter Voltage VCEO -60 Emitter to Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector Power Dissipation PC 2 Junction, Storage Temperature TJ, TSTG 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (T.






PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier. Features • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C www.DataSheet.co.kr 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 Conditions Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably.



2012-03-22 : CDM-20008    S1AL    S1BL    S1DL    S1GL    S1JL    S1KL    S1ML    PA5711    B1274   


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