B1274 Datasheet
Part Number |
B1274 |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
PNP/NPN Epitaxial Planar Silicon Transistors |
Datasheet |
B1274 Datasheet (PDF) |
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency Power Amplifier Applications
Applications
•
Package Dimensions
unit : mm 2041A
[2SB1274/2SD1913]
4.5 2.8
3.5 7.2 16.0 18.1
General power amplifier.
Features
• • • • •
10.0 3.2
Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting.
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55
2.4
2.4 0.7
Specifications
( ):2SB1274 Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
www.DataSheet.co.kr
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
2.55
2.55
Conditions
Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150
Unit V V V A A W W °C °C
Elect.
Part Number |
B1274 |
Manufacturers |
SeCoS |
Logo |
|
Description |
PNP Plastic Encapsulated Transistor |
Datasheet |
B1274 Datasheet (PDF) |
Elektronische Bauelemente
2SB1274
-3A , -60V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification. Wide ASO (Adoption of MBIT Process) Low Saturation Voltage.
TO-220J
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-60
Collector to Emitter Voltage
VCEO
-60
Emitter to Base Voltage
VEBO
-6
Collector Current - Continuous
IC -3
Collector Power Dissipation
PC 2
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit
V V V A W °C
ELECTRICAL CHARACTERISTICS (T.
PNP/NPN Epitaxial Planar Silicon Transistors
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency Power Amplifier Applications
Applications
•
Package Dimensions
unit : mm 2041A
[2SB1274/2SD1913]
4.5 2.8
3.5 7.2 16.0 18.1
General power amplifier.
Features
• • • • •
10.0 3.2
Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting.
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55
2.4
2.4 0.7
Specifications
( ):2SB1274 Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
www.DataSheet.co.kr
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
2.55
2.55
Conditions
Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably.
2012-03-22 : CDM-20008 S1AL S1BL S1DL S1GL S1JL S1KL S1ML PA5711 B1274