SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220F package ·Complement ...
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation
voltage:
VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation:
PC=30W(TC=25 )
APPLICATIONS ·With general purpose applications
PINNING PIN 1 2 3
DESCRIPTION Emitter Collector Base
Product Specification
2SB1367
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO VCEO
Collector-base
voltage Collector-emitter
voltage
VEBO IC IB PC Tj
Emitter-base
voltage Collector current Base current Collector dissipation Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE -100 -100 -5 -5 -0.5 30 150
-55~150
UNIT V V V A A W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown
voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation
voltage IC=-4A ;IB=-0.4A
VBE Base-emitter on
voltage
IC=-4A;VCE=-5V
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-4A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
COB Collector output capacitance
f=1MHz;VCB=-10V
Product Specification
2SB1367
MIN TYP. MAX UNIT
-100
V
-2.0 V
-1.5 V
-0.1 mA
-1.0 mA
40 ...