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B1375

Toshiba Semiconductor

2SB1375


Description
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) High power dissipation: PC = 25 W (Tc = 25°C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characte...



Toshiba Semiconductor

B1375

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