2SB1399
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
123
1. Base 2. Collecto...
2SB1399
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
123
1. Base 2. Collector 3. Emitter
2
1 ID
1.0 kΩ (Typ)
200 Ω (Typ)
3
2SB1399
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg ID*1
Ratings
Unit
–120
V
–120
V
–7
V
–10
A
–15
A
2
W
30
150
°C
–55 to +150
°C
10
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO –120 —
voltage
Collector to emitter breakdown V(BR)CEO –120 —
voltage
Emitter to base breakdown
V(BR)EBO
–7
—
voltage
Collector cutoff current
I CBO
—
—
I CEO
—
—
DC current transfer ratio
hFE
1000 —
Collector to emitter saturation VCE (sat)1 —
—
voltage
VCE (sat)2
—
—
Base to emitter saturation
VBE (sat)1
—
—
voltage
VBE (sat)2
—
—
C to E diode forward
voltage VD
—
—
Note: 1. Pulse Test.
See switching characteristic curve of 2SB955(K).
Max Unit
—
V
—
V
—
V
–10 µA –10 20000 –1.5 V –3.0 –2.0 V –3.5 3.0 V
Test Conditions IC = –0.1 mA, IE = 0
IC = –25 mA, RBE = ∞
IE = –50 mA, IC = 0
VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = 10 mA*1 IC = –10 A, IB = –100 mA*1 IC = –5 A, IB = 10 mA*...