Power Transistor (−50V, −2A)
2SB1443
Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / ...
Power Transistor (−50V, −2A)
2SB1443
Features 1) Low saturation
voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. Dimensions (Unit : mm)
ATV
Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −50 −6 −2 −5 1 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 ∗2 W
(1) (2) (3)
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperature
(1) (2) (3)
Emitter Collector Base
°C °C
∗1 Single pulse, Pw=10ms 2 ∗2 Printed circuit board 1.7mm thick, collector plating 1cm or larger.
Packaging specifications and hFE
Type 2SB1443 ATV Q − TV2 2500
Package hFE Marking Code Basic ordering unit (pieces)
∗Denotes hFE
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation
voltage DC current transfer ratio Transition frequency Output capacitance
∗ Measured using pulse current
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. −50 −50 −6 − − − 120 − −
Typ. − − − − − −0.15 − 200 36
Max. − − − −0.1 −0.1 −0.35 270 − −
Unit V V V μA μA V − MHz pF IC=−50μA IC=−1mA IE=−50μA VCB=−50V
Conditions
VEB=−5V IC/IB=−1A/−50mA VCE/IC=−2V/−0.5A VCE=−2V, IE=0.5A, f=100MHz VCB=−10V, IE=0A, f=1MHz
∗
∗
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