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B1451 Datasheet

Part Number B1451
Manufacturers Sanyo
Logo Sanyo
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet B1451 DatasheetB1451 Datasheet (PDF)

Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low collector-to-emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2069B [2SB1451/2SD2200] ( ) : 2.

  B1451   B1451






Part Number B1457
Manufacturers Toshiba
Logo Toshiba
Description 2SB1457
Datasheet B1451 DatasheetB1457 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Colle.

  B1451   B1451







Part Number B1453
Manufacturers NEC
Logo NEC
Description 2SB1453
Datasheet B1451 DatasheetB1453 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High DC current amplifier ratio h.

  B1451   B1451







Part Number B1452
Manufacturers Sanyo
Logo Sanyo
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet B1451 DatasheetB1452 Datasheet (PDF)

Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment. · Low collector-to-emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2069B [2SB1452/2SD2201] ( ) : 2.

  B1451   B1451







Part Number B1450
Manufacturers Sanyo
Logo Sanyo
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet B1451 DatasheetB1450 Datasheet (PDF)

Ordering number : EN3150A 2SB1450 / 2SD2199 SANYO Semiconductors DATA SHEET 2SB1450 / 2SD2199 PNP / NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications Features • Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment. - High density surface mount applications. - Small size of 2SB1450/2SD2199-applied equipment. • Low collector-to-emitter saturation voltage. • Highly resistant to bre.

  B1451   B1451







PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low collector-to-emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2069B [2SB1451/2SD2200] ( ) : 2SB1451 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)90 (–)80 (–)6 (–)5 (–)9 1.65 30 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.3A Ratings min typ 70* 30 20 max (–)0.1 (–)0.1 280* 0.4 (–0.5) Unit mA mA MHz V V * : The 2SB14512SD2200 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO.


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