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B1467 Datasheet

Part Number B1467
Manufacturers Sanyo
Logo Sanyo
Description 2SB1467
Datasheet B1467 DatasheetB1467 Datasheet (PDF)

Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1467/2SD2218] ( ) : 2SB1467 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolut.

  B1467   B1467






Part Number B1468
Manufacturers Sanyo
Logo Sanyo
Description 2SB1468
Datasheet B1467 DatasheetB1468 Datasheet (PDF)

Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications · Relay drivers, high-speed inverters, converters, etc. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1468/2SD2219] ( ) : 2SB1468 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absol.

  B1467   B1467







Part Number B1465
Manufacturers Renesas
Logo Renesas
Description PNP SILICON EPITAXIAL TRANSISTOR
Datasheet B1467 DatasheetB1465 Datasheet (PDF)

DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and pulse motor drivers or relay drivers in such as OA and FA equipments. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Colle.

  B1467   B1467







Part Number B1464
Manufacturers Panasonic
Logo Panasonic
Description PNP Transistor
Datasheet B1467 DatasheetB1464 Datasheet (PDF)

2SB1464 http:の//wwwし.はsてeホmiー、coムn.ペpaーnとジasをo、niごc.しcoて.くjいpだまさすい、。。Sold1eをr4.0Di±p0.54.0 s q q q s (TC=25˚C) TC=25°C Ta=25°C VCBO VCEO VEBO ICP IC PC Tj Tstg –100 –100 –7 –12 –8 25 2.0 150 –55 ~ +150 V V V A A W ˚C ˚C s (TC=25˚C) 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) C B E ICBO IEBO VCEO hFE1* hFE2 VCE(s.

  B1467   B1467







Part Number B1462L
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet B1467 DatasheetB1462L Datasheet (PDF)

Transistors 2SB1462L Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216L 32 Unit: mm 0.020±0.010 0.80±0.05 I Features • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collect.

  B1467   B1467







2SB1467

Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1467/2SD2218] ( ) : 2SB1467 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)60 (–)30 (–)6 (–)8 (–)15 2 20 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1* hFE2 fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.15A Ratings min typ 70* 30 120 max (–)0.1 (–)0.1 280* (–0.5) 0.4 Unit mA mA MHz V V * : The 2SB1467/2SD2218 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO products described or contained herein do not have specifications that can han.


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