Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmationS.o1l8d.e0r±0D.i5pDisMcaionntti...
Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmationS.o1l8d.e0r±0D.i5pDisMcaionnttiennuaendc
Power Transistors
2SB1499, 2SB1499A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation
voltage VCE(sat) q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1499 base
voltage 2SB1499A
VCBO
–60 –80
Collector to 2SB1499 emitter
voltage 2SB1499A
VCEO
–60 –80
Emitter to base
voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC
PC
–5 –8 –4 15 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V
V V A A W ˚C ˚C
13.0±0.2e/ 4.2±0.2 2.5±0.2
Unit: mm
10.0±0.2
5.0±0.1 1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1 1.05±0.1
0.55±0.1
C1.0 2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
2SB1499 ICES
2SB1499A
Collector cutoff current
2SB1499 ICEO
2SB1499A
Emitter cutoff current
Collector to emitter 2SB1499
voltage
2SB1499A
IEBO VCEO
Forward current transfer ratio
Base to emitter
voltage Collector to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
hFE1* ...
