Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276...
Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
2.0 4.0 2.0 3.0
10.0 6.0
s Features
q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation
voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base
voltage
Collector to emitter
voltage
Emitter to base
voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–160 –140 –5 –12 –7 120 3.5
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
26.0±0.5
1.5
1.5
20.0±0.5 2.5
Solder Dip
2.0±0.3 3.0±0.3
1.0±0.2
1.5 2.7±0.3
0.6±0.2
5.45±0.3 10.9±0.5
123
1:Base 2:Collector 3:Emitter TOP–3L Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf
VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –7A IC = –7A, IB = –7mA IC = –7A, IB = –7mA VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –7...
