Ordering number:EN3714
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1508/2SD2281
50V/12A High-Current Switching Appl...
Ordering number:EN3714
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1508/2SD2281
50V/12A High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation
voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2039A
[2SB1508/2SD2281]
( ) : 2SB1508
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation
Voltage
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A IC=(–)6A, IB=(–)0.3A
E : Emitter C : Collector B : Base SANYO : TO-3PML
Ratings (–)60 (–)50 (–)6 (–)12 (–)25 3.0 45 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.1 (–)0.1 280*
(–0.5) 0.4
Unit mA mA
MHz V V
* : The 2SB1508/2SD2281 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specif...
