Ordering number:EN3716
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1511/2SD2285
30V/20A High-Current Switching Appl...
Ordering number:EN3716
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1511/2SD2285
30V/20A High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation
voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2039A
[2SB1511/2SD2285]
( ) : 2SB1511
Specifications
E : Emitter C : Collector B : Base SANYO : TO-3PML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC
Tj Tstg
Tc=25˚C
(–)60 (–)30
(–)6 (–)20 (–)40
3.0 40 150 –55 to +150
V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Unit
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation
Voltage
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2 VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)10A IC=(–)8A, IB=(–)0.4A
fT VCE=(–)5V, IC=(–)1A
70* 30
(–0.25) 0.2 120
(–)0.1 (–)0.1 280*
(–0.5) 0.4
mA mA
V V MHz
* : The 2SB1511/2SD2285 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specif...
